Search results for "Bipolar junction transistor"
showing 6 items of 6 documents
A delay time bound for distributed parameter circuits with bipolar transistors
1990
We prove here a stability theorem concerning a parabolic system of equations with non-linear boundary conditions that governs the behaviour of a class of networks in which the bipolar transistors operating under large-signal conditions are interconnected with reg-lines modelled by telegraph equations
Noise and gain performance of PSA transistor series for personal communication systems vs. emitter number and operating conditions
1995
The booming market of communication system applications in the low microwave range put greater demands on the component performance at lower supply voltages and limited current consumption, as well as on production cost and integration level. In this work, we present the results of an extensive characterization activity carried out on several advanced polysilicon bipolar transistors as requested by the manufacturer. The devices were grouped according to their emitter finger number and were characterized over the 2-6 GHz frequency range in terms of noise, gain and scatterino parameters at different bias conditions. A comparative analysis has been performed to explore how the transistor perfo…
High-Frequency Experimental Characterization and Modeling of Six Pack IGBTs Power Modules
2016
In this paper, a method to characterize the high-frequency (HF) behavior of six pack insulated gate bipolar transistors (IGBTs) power module (PM) is presented. The method is based on experimental measurements at the external pins of the device and it allows one to extract internal inductive and capacitive parasitic coupling without the knowledge of structural and physical parameters of the PM. The HF model of a six pack IGBTs PM has been developed, in the frequency range of 150 kHz-30 MHz, and it has been implemented in MATLAB environment. The method has been experimentally validated by comparing the frequency behavior of the PM with the simulated response. Moreover, the HF conducted distur…
Lumped parameter approach of nonlinear networks with transistors
1991
In this chapter we study the lumped parameter modelling of a large class of circuits composed of bipolar transistors, junction diodes and passive elements (resistors, capacitors, inductors). All these elements are nonlinear: the semiconductor components are modelled by “large signal” equivalent schemes, the capacitors and inductors have monotone characteristics while the resistors can be included in a multiport which also has a monotone description.
Influence Of The Model Parameters On The Noise Performance Of Double-polysilicon BJTs For Microwave LNA's
1997
In the recent post we have measured the noise and the scattering parameters of several series of double polysilicon BJT's over the 2-6 GHz frequency range at different collector current values, according to their emitter finger number. From the experimental data, a noisy circuit model has been extracted based on a T-equivalent network. By means of the correlation matrix techniques, novel analytical expressions of the noise parameters have been derived. As a second step, a sensitivity analysis has been performed for evaluating the influence of each model element on the noise performance. The results show how to improve the characteristics of such devices for a better performance when employe…
Single-Event Burnout Mechanisms in SiC Power MOSFETs
2018
Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear energy transfers greater than 10 MeV/cm 2 /mg, above which the SEB threshold voltage is nearly constant at half of the rated maximum operating voltage for these devices. TCAD simulations show a parasitic bipolar junction transistor turn-on mechanism, which drives the avalanching of carriers and leads to runaway drain current, resulting in SEB. peerReviewed